Wafer non-uniformity tweaking through localized ion enhanced plasma (iep)

A semiconductor processing chamber faceplate, comprising:

• a first surface and a second surface opposite the first surface, wherein:
• the faceplate defines an inner plurality of apertures through the faceplate;
• each of the inner plurality of apertures comprises an aperture profile having a generally cylindrical section that extends through the second surface of the faceplate;
• the faceplate defines an outer plurality of apertures through the faceplate that are positioned radially outward from the inner plurality of apertures;
• and
• each of the outer plurality of apertures comprises a conical aperture profile that extends through the second surface of the faceplate.

A method of semiconductor processing, comprising:

• flowing a precursor into a processing chamber, wherein:
• the processing chamber comprises a faceplate and a substrate support on which a substrate is disposed;
• a processing region of the processing chamber is at least partially defined between the faceplate and the substrate support;
• the faceplate defines an inner plurality of apertures through which the precursor flows;
• each of the inner plurality of apertures comprises a generally cylindrical aperture profile;
• the faceplate defines an outer plurality of apertures through the faceplate that are positioned radially outward from the inner plurality of apertures;
• and
• each of the outer plurality of apertures comprises a conical aperture profile that extends through a surface of the faceplate facing the substrate support;
• generating a plasma of the precursor within the processing region of the processing chamber;
• and
• depositing a material on the substrate.