Back to results
US 2022/0093367 A1Published application
Etching method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsKoki TANAKA, Ryu NAGAI, Takatoshi ORUI, Ryutaro SUDA
Life of this patent
Estimating the term…
Abstract
A disclosed etching method includes (a) forming a protective film on a surface in a chamber. The etching method further includes (b) etching an etch film of a substrate by using hydrogen fluoride within the chamber. The substrate includes the etch film and a mask provided on the etch film. The protective film is formed of the same type of material as a material of the mask.
Claims12
An etching method comprising:
- (a) forming a protective film on a surface in a chamber;
- and
- (b) etching an etch film of a substrate by using hydrogen fluoride within the chamber,
- wherein the substrate includes the etch film and a mask provided on the etch film, and
- the protective film is formed of a same type of material as a material of the mask.
2 more elements
A plasma processing apparatus comprising:
- a chamber,
- a gas supply configured to supply a gas into the chamber;
- a plasma generator configured to generate plasma from a gas within the chamber;
- and
- a controller configured to control the gas supply and the plasma generator,
- wherein the controller
- controls the gas supply to supply a film-forming gas into the chamber to form a protective film on a surface in the chamber, and
- controls the gas supply and the plasma generator to generate plasma from an etching gas to etch an etch film of a substrate by using hydrogen fluoride within the chamber, and
- the film-forming gas contains a precursor that forms the protective film from a same type of material as a material of a mask provided on the etch film of the substrate.
6 more elements
Dependencies are inferred from the claim text.