Write driver boost circuit for memory cells
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorSanjeev Kumar Jain
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Abstract
Circuits, systems, and methods are described herein for generating a boost voltage for a write operation of a memory cell. In one embodiment, a boost circuit includes a first inverter and a second inverter, each configured to invert a write signal. The boost circuit also includes a transistor and a capacitor. The transistor is coupled to an output of the first inverter. The transistor is configured to charge a capacitor based on the write signal and provide a supply voltage to a write driver. The capacitor is coupled to an output of the second inverter. The capacitor is configured to generate and provide a delta voltage to the write driver.
Claims22
A boost circuit configured to generate a boost voltage to enable a write operation of a memory cell, the boost circuit comprising:
- a first inverter and a second inverter, each configured to invert a write signal;
- a transistor coupled to an output of the first inverter, the transistor configured to charge a capacitor based on the write signal and provide a supply voltage to a write driver;
- and
- the capacitor coupled to an output of the second inverter, the capacitor configured to generate and provide a delta voltage to the write driver,
- wherein the write driver comprises a pair of logic gates coupled together in parallel and each logic gate of the pair of logic gates receives a combination of the supply voltage and the delta voltage when the capacitor discharges.
(canceled)
A system for generating a boost voltage to enable a write operation of a memory cell, the system comprising:
- a boost circuit configured to generate a boost voltage, the boost circuit comprising:
- a first inverter and a second inverter, each configured to invert a write signal;
- a transistor coupled to an output of the first inverter, the transistor configured to charge a capacitor based on the write signal and provide a supply voltage to a write driver;
- and
- a capacitor coupled to an output of the second inverter, the capacitor configured to generate and provide a delta voltage to the write driver;
- the write driver coupled to the boost circuit configured to provide a combination of the supply voltage and the delta voltage to a memory cell coupled to the write driver based on the write signal;
- and
- the memory cell configured to execute a write operation using the combination of the supply voltage and the delta voltage,
- wherein the write driver comprises a pair of logic gates coupled together and each logic gate of the pair of logic gates receives a combination of the supply voltage and the delta voltage when the capacitor discharges.
(canceled)
A method of generating a boost voltage to enable a write operation of a memory cell, the method comprising:
- receiving, by a first inverter and a second inverter, a write signal generated by a write decoder circuit;
- generating, by the first inverter and a second inverter, an inverted write signal that has an opposite waveform of the write signal;
- providing, by a transistor, a supply voltage based on the inverted write signal;
- storing, by a capacitor at a first time, a charge based on the supply voltage being present and the inverted write signal;
- and
- dissipating, by the capacitor at a second time, the charge to a write driver circuit, wherein the boost voltage comprises the dissipated charge.
Dependencies are inferred from the claim text.