Semiconductor storage device

A semiconductor storage device, comprising:

• a plurality of gate electrodes;
• a semiconductor layer facing the plurality of gate electrodes;
• a gate insulating layer between each of the plurality of gate electrodes and the semiconductor layer, the gate insulating layer having an orthorhombic crystal structure and including oxygen and hafnium;
• a plurality of first wirings connected to the respective gate electrodes;
• a second wiring connected to the semiconductor layer;
• and
• a controller configured to:
• execute a write sequence and an erasing sequence by applying voltages to at least one of the first wirings and,
• increase either an erasing voltage to be applied to the second wiring in the erasing sequence or an application time of the erasing voltage in the erasing sequence after a total number of executions of the write sequence or the erasing sequence has reached a particular number.

A semiconductor storage device, comprising:

• a memory die including a memory cell that includes a gate insulating film having an orthorhombic crystal structure and comprising oxygen and hafnium;
• and
• a controller chip connected to the memory die and configured to:
• send a first command to the memory cell for increasing a voltage applied in at least one of a write sequence or an erasing sequence to the memory die after a total number of executions of the write sequence or the erasing sequence reaches a first number, and
• send a second command to the memory die for further increasing the voltage after the total number of executions of the write sequence or the erasing sequence reaches a second number that is larger than the first number.