Semiconductor device

A semiconductor device comprising:

• a standard cell comprising:
• an active region extending on a substrate in a first direction;
• a gate structure intersecting the active region;
• a power supply line structure electrically connected to the active region and extending in the first direction;
• first metal lines electrically connected to the gate structure;
• power distribution patterns disposed on the power supply line structure and spaced apart from each other in a second direction intersecting the first direction;
• net metal lines spaced apart from the power distribution patterns in the second direction;
• and
• pin metal lines spaced apart from the net metal lines in the first direction,
• wherein the power distribution patterns, the net metal lines, and the pin metal lines are disposed on a same level, based on a surface of the substrate,
• wherein the net metal lines and the power distribution patterns are disposed in accordance a distance design rule satisfying a critical spacing distance between adjacent interconnections, and
• wherein the pin metal lines provide an interconnection between the standard cell and another standard cell that is adjacent to the standard cell.

A semiconductor device comprising:

• a first standard cell and a second standard cell disposed on a substrate, each including a semiconductor element and an interconnection structure electrically connected to the semiconductor element, and the first standard cell sharing a boundary with the second standard cell,
• wherein the interconnection structure comprises:
• a first power supply line and a second power supply line configured to provide power to the semiconductor element;
• first metal lines configured to provide a signal to the semiconductor element;
• power distribution patterns electrically connected to the first power supply line and the second power supply line;
• net metal lines electrically connected to the first metal lines;
• and
• pin metal lines disposed at a same level as the net metal lines and disposed at a different distance from the boundary than the net metal lines, and
• wherein the pin metal lines are interconnection lines of a routing structure between the first standard cell and the second standard cell.