Method and apparatus for correcting position of wafer and storage medium

Abstract

The present application provides a method and apparatus for correcting the position of a wafer and a storage medium. The method includes: acquiring etching parameters of preset points on an etched first wafer, wherein the etching parameters include positional information and an etch rate; determining the positional information of the central point of an etch rate distribution map of the first wafer according to the etching parameters of the preset points; and correcting the position of a second wafer to be etched according to the positional information of the central point of the etch rate distribution map of the first wafer, so that the circle center of the second wafer coincides with the central point of the etch rate distribution map of the first wafer.

Dependencies are inferred from the claim text.