Film structure for electric field assisted bake process
OwnerMangesh Ashok BANGAR, Huixiong DAI +4inventors
InventorsMangesh Ashok BANGAR, Huixiong DAI, Pinkesh Rohit SHAH, Srinivas D. NEMANI, Christopher S. NGAI, Ellie Y. YIEH
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Abstract
A film structure for an electric field assisted bake process and methods of forming and implementing such a film structure are described herein. An example is a method for semiconductor processing. A photoresist is deposited on an underlayer disposed on a substrate. The underlayer includes carbon. The photoresist is exposed to a pattern of electromagnetic radiation. After exposing the photoresist, an electric field assisted bake is performed on the photoresist.
Claims20
A method for semiconductor processing, the method comprising:
- depositing a photoresist on an underlayer disposed on a substrate, the underlayer including carbon;
- exposing the photoresist to a pattern of electromagnetic radiation;
- and
- after exposing the photoresist, performing an electric field assisted bake on the photoresist.
A method for semiconductor processing, the method comprising:
- depositing a photoresist on an underlayer disposed on a substrate, the underlayer being a material having an electrical resistance in a range from 9×10−6 Ω*cm to 1014 Ω*cm;
- exposing the photoresist to a pattern of electromagnetic radiation;
- and
- after exposing the photoresist, performing an electric field assisted bake on the photoresist.
A method for semiconductor processing, the method comprising:
- performing a bake on a photoresist, the photoresist being disposed directly on an underlayer, the underlayer being disposed on a substrate, the underlayer having a concentration of carbon in a range from 35 atomic percent to 45 atomic percent, performing the bake comprising:
- controlling a temperature of an environment in which the photoresist is disposed;
- and
- applying an electric field to the photoresist.
Dependencies are inferred from the claim text.