Compound, polymer, pattern forming material, pattern forming method, and method of manufacturing semiconductor device

A compound represented by the following general formula (2),

• where, in the general formula (2), R1 is a hydrogen atom or a methyl group, R2 is a C2-14 hydrocarbon group in which α carbon is a primary carbon, secondary carbon or tertiary carbon, Q is a single bond, a C1-20 hydrocarbon group in which the hydrogen atom may be substituted by a halogen atom, or an organic group containing an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms or at a bond terminal of a C1-20 hydrocarbon group in which the hydrogen atom may be substituted by a halogen atom, and Xs are independently a hydrogen atom or a C2-4 hydrocarbon group, at least one of Xs being the C2-4 hydrocarbon group.

A pattern forming material used for forming an organic film on a film to be processed of a substrate having the film to be processed, the organic film being patterned and then impregnated with a metallic compound to form a composite film which is used as a mask pattern when processing the film to be processed,

• the pattern forming material containing a polymer including a monomer unit represented by the following general formula (3) or (4),
• where, in the general formulas (3) and (4), R1 is a hydrogen atom or a methyl group, R2s are independently a C2-14 hydrocarbon group in which α carbon is a primary carbon, secondary carbon or tertiary carbon, Q is a single bond, a C1-20 hydrocarbon group in which the hydrogen atom may be substituted by a halogen atom, or an organic group containing an oxygen atom, a nitrogen atom, or a sulfur atom between carbon-carbon atoms or at a bond terminal of a C1-20 hydrocarbon group in which the hydrogen atom may be substituted by a halogen atom, and X and Y are independently a hydrogen atom or a C1-4 hydrocarbon group, at least one of X and Y being the C1-4 hydrocarbon group.