Semiconductor Device and Method of Manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSih-Hao Liao, Yu-Hsiang Hu, Hung-Jui Kuo, Chen-Hua Yu
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device includes applying a polymer mixture over a substrate, exposing and developing at least a portion of the polymer mixture to form a developed dielectric, and curing the developed dielectric to form a dielectric layer. The polymer mixture includes a polymer precursor, a photosensitizer, and a solvent. The polymer precursor may be a polyamic acid ester.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- placing a polymer material over a substrate, the polymer material comprising:
- a polymer precursor, the polymer precursor comprising
- wherein R represents
- a photosensitizer;
- and
- a solvent;
- patterning the polymer material;
- and
- curing the polymer material at a temperature in a range of 200° C. to 300° C.
A method of manufacturing a semiconductor device, the method comprising:
- forming a polymer precursor, the forming the polymer precursor comprising:
- reacting 3,3,4,4-biphenyltetracarboxylic dianhydride with a first reactant to form a second reactant;
- and
- reacting the second reactant with 4,4-(4,4-isopropylidenediphenyl-1,1-diyldioxy)dianiline (BAPP) to form the polymer precursor;
- forming a polymer mixture, the polymer mixture comprising the polymer precursor and a solvent;
- applying the polymer mixture over a substrate;
- exposing and developing at least a portion of the polymer mixture to form a developed dielectric;
- curing the developed dielectric to form a dielectric layer;
- and
- forming a conductive feature over the dielectric layer.
A semiconductor package, comprising:
- a first encapsulant on a first dielectric layer, the first encapsulant encapsulating a first through via;
- and
- a first redistribution structure over the first encapsulant and the first through via, the first redistribution structure comprising:
- a second dielectric layer, the second dielectric layer having a dissipation factor in a range of 0.007 to 0.01 at 60 GHz and having a Young's modulus in a range of 3.7 GPa to 3.8 GPa;
- and
- a first metallization pattern on the second dielectric layer, the first metallization pattern physically and electrically coupling the first through via.
Dependencies are inferred from the claim text.