Reflection-type mask blank, reflection-type mask and method for manufacturing same, and method for manufacturing semiconductor device
AssigneeHoya Corporation
InventorMizuki KATAOKA
Life of this patent
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Abstract
Provided is a reflection-type mask blank which enables the further reduction of the shadowing effect of a reflection-type mask. A reflection-type mask blank in which a multilayer reflection film and an absorber film are arranged in this order on a substrate, the reflection-type mask blank being characterized in that the absorber film is made from a material comprising an amorphous metal containing at least one element selected from tin (Sn), tantalum (Ta), chromium (Cr), cobalt (Co), nickel (Ni), antimony (Sb), platinum (Pt), iridium (Ir), iron (Fe), gold (Au), aluminum (Al), copper (Cu), zinc (Zn) and silver (Ag) and the absorber film has a film thickness of 55 nm or less.
Claims17
A reflective mask blank comprising:
- a multilayer reflective film provided on a substrate;
- and
- an absorber film provided on the multilayer reflective film,
- wherein the absorber film includes an amorphous metal containing Tin (Sn) and at least one element selected from tantalum (Ta), chromium (Cr), cobalt (Co), nickel (Ni), antimony (Sb), platinum (Pt), iridium (Ir), iron (Fe), gold (Au), aluminum (Al), copper (Cu), zinc (Zn), and silver (Ag), and
- wherein a film thickness of the absorber film is 55 nm or less.
A reflective mask comprising a multilayer reflective film provided on a substrate and an absorber pattern provided on the multilayer reflective film,
- wherein the absorber pattern includes an amorphous metal containing Tin (Sn) and at least one element selected from tantalum (Ta), chromium (Cr), cobalt (Co), nickel (Ni), antimony (Sb), platinum (Pt), iridium (Ir), iron (Fe), gold (Au), aluminum (Al), copper (Cu), zinc (Zn), and silver (Ag), and
- wherein a film thickness of the absorber film is 55 nm or less.
Dependencies are inferred from the claim text.