Liquid crystal display device

A liquid crystal display device comprising:

• a pixel comprising a first pixel electrode of a first liquid crystal element and a second pixel electrode of a second liquid crystal element;
• and
• a shift register electrically connected to the pixel, the shift register comprising a first transistor, a second transistor, a third transistor, and a fourth transistor,
• wherein each of the first pixel electrode and the second pixel electrode is a sub-pixel,
• wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,
• wherein one of a source and a drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor,
• wherein the other of the source and the drain of the first transistor is electrically connected to a first wiring,
• wherein the other of the source and the drain of the second transistor is electrically connected to a second wiring,
• wherein a gate electrode of the first transistor is electrically connected to a gate electrode of the fourth transistor,
• wherein a gate electrode of the second transistor is electrically connected to the one of the source and the drain of the third transistor and the one of the source and the drain of the fourth transistor,
• wherein a gate electrode of the third transistor is electrically connected to the other of the source and the drain of the third transistor,
• wherein each of the first transistor, the second transistor, the third transistor, and the fourth transistor includes:
• a gate insulating film over the gate electrode;
• a first semiconductor film over the gate insulating film;
• a second semiconductor film over the first semiconductor film;
• a third semiconductor film over the second semiconductor film;
• and
• a source electrode and a drain electrode over the third semiconductor film,
• wherein an edge of the source electrode has a region positioned inside a first edge of the third semiconductor film, and
• wherein an edge of the drain electrode has a region positioned inside a second edge of the third semiconductor film.