Arrangement of adjacent layer structures for a magnetoresistive magnetic field sensor, magnetoresistive magnetic field sensor and method for producing

An arrangement of at least two adjacently arranged and identically constructed layer structures for a magnetoresistive magnetic field sensor:

• each layer structure comprising;
• at least one antiferromagnetic layer;
• a first ferromagnetic layer with a first magnetic moment, wherein exchange coupling is present between the antiferromagnetic layer and the first ferromagnetic layer;
• and
• a second ferromagnetic layer with a second magnetic moment;
• a non-magnetic coupling layer arranged between the first and second ferromagnetic layers;
• wherein the second ferromagnetic layer is antiparallel coupled with the first ferromagnetic layer via the non-magnetic coupling layer;
• wherein corresponding first and corresponding second ferromagnetic layers of the layer structures are arranged adjacently with a centre-to-centre distance of 50 μm or less and magnetisation of the corresponding first and corresponding second ferromagnetic layers differs from one another in particular is of substantially mutually opposed orientation;
• wherein the different magnetisations of all corresponding ferromagnetic layers of the adjacent layer structures is simultaneously established in one pinning step.