Method and device for monitoring gate signal of power semiconductor

Abstract

The present invention concerns a method and device for monitoring the gate signal of a power semiconductor (SI), the gate signal of the power semiconductor (SI) being provided by a gate driver (12), generates an expected signal (VGexp) that corresponds to the signal outputted by the gate driver (12) when no deterioration of the gate driver (12) and/or of the power semiconductor (SI) and/or of a load linked to the power semiconductor (SI) exists, compares the expected signal (VGexp) and the signal (VGmeas) outputted by the gate driver (12), determines if a deterioration of the gate driver (12) and/or of the power semiconductor (SI) and/or of a load linked to the power semiconductor (SI) exists using the result of the comparing of the expected signal (VGexp) and the signal (VGmeas) outputted by the gate driver (12).

Dependencies are inferred from the claim text.