Degradation detection device and degradation detection method
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorHideaki Majima
Life of this patent
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Abstract
According to one embodiment, a degradation detection device includes a driving circuit that supplies a driving signal that controls on/off of an output transistor to the output transistor and an output circuit that compares a value of integral of an output current that is output by the output transistor in an off-state thereof over a predetermined period of time with a predetermined threshold when the output transistor is turned from an on-state thereof to an off-state thereof and outputs a signal that indicates a degradation state of the output transistor depending on a result of such comparison.
Claims20
A degradation detection device, comprising:
- an output transistor with a main current path that is connected between a power source supply terminal and an output terminal;
- a driving circuit that supplies a driving signal that controls on/off of the output transistor to the output transistor;
- and
- an output circuit that compares a value of integral of an output current that is output by the output transistor in an off-state thereof over a predetermined period of time with a predetermined threshold when the output transistor is turned from an on-state thereof to an off-state thereof and outputs a signal that indicates a degradation state of the output transistor depending on a result of such comparison.
A degradation detection method, comprising:
- a step of shifting an output transistor with a main current path that is connected between a power source supply terminal and an output terminal from an on-state thereof to an off-state thereof;
- a step of integrating an output current that is output by the output transistor over a predetermined period of time in a state where the output transistor is shifted to an off-state thereof to obtain a value of integral;
- and
- a step of comparing the value of integral with a predetermined threshold and determining a degradation state of the output transistor depending on a result of such comparison.
A degradation detection device, comprising:
- a first output transistor that has a main current path with one end that is connected to a power source supply terminal;
- a second output transistor that has a main current path with one end that is connected to the other end of the main current path of the first output transistor and the other end that is connected to an output terminal;
- a third output transistor that has a main current path with one end that is connected to the other end of the main current path of the second output transistor;
- a fourth output transistor with one end that is connected to the other end of the main current path of the third output transistor and the other end that is grounded;
- a driving circuit that supplies a driving signal that controls on/off of the first to fourth output transistors to the first to fourth output transistors;
- and
- a determination circuit that compares a value of integral of an output current that is output by the first output transistor in an off-state thereof over a predetermined period of time with a predetermined threshold when the first output transistor is turned from an on-state thereof to an off-state thereof and outputs a signal that indicates a degradation state of the first output transistor depending or a result of such comparison.
Dependencies are inferred from the claim text.