Silicon carbide wafer and method of preparing the same

A method of preparing a silicon carbide wafer comprising:

• disposing a raw material and a silicon carbide seed crystal to be separated in a reactor having an internal space;
• adjusting a temperature, a pressure, and an atmosphere of the internal space for sublimating the raw material and growing a silicon carbide ingot on the silicon carbide seed crystal;
• cooling the reactor and retrieving the silicon carbide ingot;
• and
• cutting the silicon carbide ingot to prepare the silicon carbide wafer,
• wherein the adjusting proceeds in a first inert gas atmosphere having a flow quantity of 100 sccm to 300 sccm, the cooling proceeds in a second inert gas atmosphere having a flow quantity of 1 sccm to 250 sccm, and the reactor has a thermal conductivity of 120 W/mK or less.