Method for growing a semi-polar gallium nitride epitaxial layer using aluminum nitride / gallium nitride superlattices

A method for growing a semi-polar gallium nitride epitaxial layer, the method comprising the steps of:

• cleaning a plurality of m-sapphire substrates to remove contamination from said plurality of m-sapphire substrates;
• growing a layer of a semi-polar gallium nitride epitaxial layer on said plurality of m-sapphire substrates being comprised of:
• nitridating for initiating growth sequence by diffusing at least one layer of ammonia (NH3) gas into at least one m-sapphire substrate;
• depositing a nucleation layer on said at least one m-sapphire substrate to reduce an interfacial stress between said epitaxial layer and said at least one m-sapphire substrate;
• growing a film stack of an aluminum nitride and a gallium nitride to initiate growth of said semi-polar gallium nitride multi-layer;
• and
• depositing a layer of an undoped gallium nitride on said at least one m-plane sapphire substrate,
• wherein said semi-polar gallium nitride epitaxial layer is grown by inserting a plurality of aluminum nitride and gallium nitride multi-layers for improving at least one parameter.