Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Substrate Processing Method

A method of manufacturing a semiconductor device, comprising:

• (a) accommodating a substrate retainer in which a substrate is supported in a reaction vessel of a substrate processing apparatus, wherein the substrate processing apparatus comprises:
• the substrate retainer provided with a substrate support region in which the substrate is supported;
• a heat insulator provided below the substrate support region;
• and
• a reaction vessel of a cylindrical shape in which the substrate retainer and the heat insulator are accommodated, wherein the reaction vessel comprises:
• an auxiliary chamber protruding outward in a radial direction of the reaction vessel and extending along an extending direction from at least a position below an upper end of the heat insulator to a position facing the substrate support region;
• and
• a first cover provided in the auxiliary chamber along a plane perpendicular to the extending direction of the auxiliary chamber so as to divide an inner space of the auxiliary chamber;
• and
• (b) supplying a process gas to the substrate in the reaction vessel.

A substrate processing method comprising:

• (a) accommodating a substrate retainer in which a substrate is supported in a reaction vessel of a substrate processing apparatus, wherein the substrate processing apparatus comprises:
• the substrate retainer provided with a substrate support region in which the substrate is supported;
• a heat insulator provided below the substrate support region;
• and
• a reaction vessel of a cylindrical shape in which the substrate retainer and the heat insulator are accommodated, wherein the reaction vessel comprises:
• an auxiliary chamber protruding outward in a radial direction of the reaction vessel and extending along an extending direction from at least a position below an upper end of the heat insulator to a position facing the substrate support region;
• and
• a first cover provided in the auxiliary chamber along a plane perpendicular to the extending direction of the auxiliary chamber so as to divide an inner space of the auxiliary chamber;
• and
• (b) supplying a process gas to the substrate in the reaction vessel.