Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

A method of manufacturing a semiconductor device, comprising:

• (a) mounting a substrate on at least one substrate mounting table including a substrate mounting surface;
• (b) supplying a processing gas from at least one gas supplier to a process chamber configured to accommodate the at least one substrate mounting table installed in a process container;
• and
• (c) discharging a gas in the process chamber,
• wherein in (c), the gas is discharged to at least one exhaust flow path formed between a first wall arranged on an outer peripheral side of the at least one substrate mounting table and a second wall arranged at an outer side of the first wall on the outer peripheral side of the at least one substrate mounting table, and at this time, the discharge of the gas to the at least one exhaust flow path is performed by using a space among the first wall, the second wall, and a shield plate arranged below the at least one substrate mounting table and configured to extend at least to a lower side of a lower end of the second wall.

A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:

• (a) mounting a substrate on at least one substrate mounting table including a substrate mounting surface;
• (b) supplying a processing gas from at least one gas supplier to a process chamber formed in a process container and configured to accommodate the at least one substrate mounting table;
• and
• (c) discharging a gas in the process chamber,
• wherein in (c), the gas is discharged to at least one exhaust flow path formed between a first wall arranged on an outer peripheral side of the at least one substrate mounting table and a second wall arranged at an outer side of the first wall on the outer peripheral side of the at least one substrate mounting table, and at this time, the discharge of the gas to the at least one exhaust flow path is performed by using a space among the first wall, the second wall, and a shield plate arranged below the at least one substrate mounting table and configured to extend at least to a lower side of a lower end of the second wall.