Method for forming aluminum film
AssigneeMitsubishi Electric Corporation
InventorYuji TOKURA
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Abstract
Provided is a technique of forming an aluminum film that has high flatness and less cavities. Step S11 is forming a first film having a thickness that is equal to or greater than 0.1 μm and less than 1 μm, by sputtering a material onto a substrate. Step S12 is reflowing the first film by heating the first film. Step S13 is forming a second film by sputtering the material onto the first film that has been reflowed. Step S14 is reflowing the second film by heating the second film. Step S15 is forming a third film by sputtering the material onto the second film that has been reflowed. Step S16 is reflowing the third film by heating the third film.
Claims2
A method for forming, on a substrate, an aluminum film made of a material that is aluminum or an aluminum compound, the method comprising performing, in this order, the steps of:
- forming a first film having a thickness that is equal to or greater than 0.1 μm and less than 1 μm, by sputtering the material onto the substrate;
- reflowing the first film by heating the first film;
- forming a second film by sputtering the material onto the first film that has been reflowed;
- reflowing the second film by heating the second film;
- forming a third film by sputtering the material onto the second film that has been reflowed;
- and
- reflowing the third film by heating the third film, wherein
- the substrate comprises a pattern provided with asperities on a side where the material undergoes sputtering, and
- in the pattern provided with asperities, a ratio of a height of a convex portion to a length of a concave portion is smaller than 0.5.
Dependencies are inferred from the claim text.