Silica-based slurry for selective polishing of carbon-based films
AssigneeCMC Materials, Inc.
InventorsBrian REISS, Fernando HUNG LOW, Michael MORROW, Helin HUANG
Life of this patent
Estimating the term…
Abstract
The invention provides a chemical-mechanical polishing composition comprising: (a) a silica abrasive, (b) a surfactant, (c) an iron cation, (d) optionally a ligand, and (e) water, wherein the silica abrasive has a negative zeta potential in the chemical-mechanical polishing composition. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising a carbon-based film, using said composition.
Claims24
A chemical-mechanical polishing composition comprising:
- (a) about 0.001 wt. % to about 10 wt. % of a colloidal silica abrasive;
- (b) a surfactant;
- (c) about 1 ppm to about 100 ppm of an iron cation;
- (d) optionally a ligand;
- and
- (e) water,
- wherein the polishing composition has a pH of about 1 to about 7, and wherein the silica abrasive has a zeta potential of −10 mV or less in the chemical-mechanical polishing composition.
A method of chemically-mechanically polishing a substrate comprising:
- (i) providing a substrate,
- (ii) providing a polishing pad,
- (iii) providing a chemical-mechanical polishing composition comprising:
- (a) about 0.001 wt. % to about 10 wt. % of a colloidal silica abrasive;
- (b) a surfactant;
- (c) about 1 ppm to about 100 ppm of an iron cation;
- (d) optionally a ligand;
- and
- (e) water,
- wherein the polishing composition has a pH of about 1 to about 7, and wherein the silica abrasive has a zeta potential of −10 mV or less in the chemical-mechanical polishing composition,
- (iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition, and
- (v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the substrate to polish the substrate.
Dependencies are inferred from the claim text.