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US 2022/0089448 A1Published application
Method for the preparation of hydridosilane oligomers
AssigneeEvonik Operations GmbH
InventorsMichael Holthausen, Maximilian Roccaro, Anna Pougin, Daniel Schmitt, Jörg Zöllner, Christian Däschlein, Odo Wunnicke
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Abstract
A method prepares hydridosilane oligomers, where the obtainable hydridosilane oligomers are useful. A method can also be used for preparing coating compositions and for preparing a silicon-containing layer.
Claims20
1:
- A method for preparing hydridosilane oligomers, comprising:
- reacting a hydridosilane composition (I) comprising at least one linear hydridosilane SinH2n+2 with n≥2 in the presence of a branched hydridosilane compound (II),
- wherein the branched hydridosilane compound (II) comprises at least one quaternary silicon atom Si(SiR3)4, wherein R is chosen from the group consisting of H;
- SinH2n+1 with n≥1;
- SimH2m with m≥2;
- and SijH2j−1 with j≥3.
3 more elements
2:
- The method according to claim 1, wherein the branched hydridosilane compound (II) is present in a range of 0.05 to 50 wt.-%, based on a total weight of the hydridosilane composition (I) and the branched hydridosilane compound (II).
3:
- The method according to claim 1, wherein the branched hydridosilane compound (II) is selected from the group consisting of neopentasilane, neopentasilane oligomer, 2,2-disilyltetrasilane, 2,2-disilylpentasilane, 3,3-disilylpentasilane, 2,2,3-trisilyltetrasilane, 1,1-disilylcyclopentasilane, 2,2,3,3-tetrasilyltetrasilane, 2,2,3-trisilylpentasilane, 2,2,4-trisilylpentasilane, 2,2-disilylhexasilane, 3,3-disilylhexasilane, 1,1-disilylcyclohexasilane, 1,1,2-trisilylcyclopentasilane, 1,1,3-trisilylcyclopentasilane, 2,2-disilylheptasilane, 3,3-disilylheptasilane, 4,4-disilylheptasilane, 2,2,3-trisilylheptasilane, 2,2,4-trisilylheptasilane, 2,3,3-trisilylheptasilane, 3,3,4-trisilylheptasilane, 3,3,5-trisilylheptasilane, 3-disilaneyl-3-silylhexasilane, 2,2,3,3-tetrasilylpentasilane, 2,2,3,4-tetrasilylpentasilane, 2,2,4,4-tetrasilylpentasilane, 2,3,3,4-tetrasilylpentasilane, 3-disilaneyl-2,2-disilylpentasilane, 3,3-bis(disilaneyl)pentasilane, 1,1,2-trisilylcyclohexasilane, 1,1,3-trisilylcylohexasilane, 1,1,4-trisilylcyclohexasilane, 1,1,2,2-tetrasilylcyclohexasilane, 1,1,3,3-tetrasilylcyclohexasilane, 1,1,4,4-tetrasilylcyclohexasilane, 1,1,2,3-tetrasilylcyclohexasilane, 1,1,2,4-tetrasilylcyclohexasilane, 1,1,3,4-tetrasilylcyclohexasilane, and a mixture thereof.
4:
- The method according to claim 1, wherein the hydridosilane composition (I) is reacted in the presence of the branched hydridosilane compound (II), in absence of a catalyst and/or wherein the reaction is solvent free.
5:
- The method according to claim 1, wherein the hydridosilane composition (I) comprises at least one linear hydridosilane SinH2n+2, wherein n is 2 to 9.
6:
- The method according to claim 1, wherein the hydridosilane composition (I) is reacted in the presence of the branched hydridosilane compound (II), at a temperature in the range of 50° C. to 300° C. and by irradiating with electromagnetic radiation.
7:
- The method according to claim 1, wherein the hydridosilane composition (I) comprises hydridosilane mixtures having a mass average molecular weight of Mw in the range of 200 to 5,000 g/mol, measured by gel permeation chromatography, and/or
- wherein the branched hydridosilane compound (II) is a neopentasilane oligomer which has a mass average molecular weight of Mw in the range of 500 to 5,000 g/mol, measured by gel permeation chromatography.
8:
- The method according to claim 1, wherein the branched hydridosilane compound (II) consists of 80 to 98 wt.-% of neopentasilane and 2 to 20 wt.-% of a neopentasilane oligomer, based on a total weight of the branched hydridosilane compound (II).
9:
- The method according to claim 1, wherein at least one dopant selected from the group consisting of
- BHxR3−x, wherein x=0-3 and R=C1-C10-alkyl radical, unsaturated cyclic, optionally ether- or amino-complexed C2-C10-alkyl radical;
- Si5H9BR2, wherein R=H, Ph, or C1-C10-alkyl radical;
- Si4H9BR2, wherein R=H, Ph, or C1-C10-alkyl radical;
- red phosphorous;
- white phosphorous (P4);
- PHxR3−x, wherein x=0-3 and R=Ph, SiMe3, or C1-C10-alkyl radical;
- P7(SiR3)3, wherein R=H, Ph, or C1-C10-alkyl radical;
- Si5H9PR2, wherein R=H, Ph, or C1C10-alkyl radical;
- and
- Si4H9PR2, wherein R=H, Ph, or C1-C10-alkyl radical;
- is added before, during, or after the reaction.
9 more elements
10:
- A hydridosilane oligomer obtainable by the method according to claim 1.
11:
- The hydridosilane oligomer according to claim 10, wherein the hydridosilane oligomer has a mass average molecular weight of Mw in the range of 500 to 5,000 g/mol, measured by gel permeation chromatography.
12:
- A method for preparing a coating composition, the method comprising:
- (i) preparing a hydridosilane oligomer according to the method according to claim 1;
- and
- (ii) diluting the hydridosilane oligomer with an organic solvent.
1 more element
13:
- The method according to claim 12, wherein the coating composition comprises 0.1 to 99 wt.-% of the organic solvent, based on a total weight of the hydridosilane oligomer and the organic solvent.
14:
- A method for preparing a silicon-containing layer, the method comprising:
- (a) preparing a hydridosilane oligomer according to the method according to claim 1;
- (b) optionally, diluting the hydridosilane oligomer with an organic solvent;
- (c) applying a hydridosilane oligomer formulation, obtained from (a) and optionally (b), on a substrate;
- and
- (d) converting the hydridosilane oligomer formulation into amorphous silicon.
3 more elements
15:
- The method according to claim 14, wherein (c) is carried out by printing, spraying, aerosol assisted chemical vapor deposition, direct liquid injection chemical vapor deposition, spin-coating, dip-coating, meniscus coating, slit coating, slot-die coating, or curtain coating;
- and/or
- wherein (d) is carried out thermally and/or by using electromagnetic radiation and/or by electron ion bombardment.
16:
- A method, comprising:
- producing an optoelectronic or electronic component, wherein the optoelectronic or electronic component comprises a hydridosilane oligomer obtained by the method according to claim 1.
17:
- The method according to claim 3, wherein the branched hydridosilane compound (II) is selected from the group consisting of neopentasilane, neopentasilane oligomer, and a mixture thereof.
18:
- The method according to claim 8, wherein the branched hydridosilane compound (II) consists of 90 to 92 wt.-% of the neopentasilane and 8 to 10 wt.-% of the neopentasilane oligomer, based on the total weight of the branched hydridosilane compound (II).
19:
- The method according to claim 12, wherein the organic solvent is selected from the group consisting of toluene and cyclooctane.
20:
- The method according to claim 14, wherein the organic solvent is selected from the group consisting of toluene and cyclooctane.