MXene Optoelectronic Systems And Devices

A polarizer, comprising:

• a substrate;
• a plurality of parallel elongate MXene portions disposed on the substrate;
• the MXene portions having an average width and being arranged in an essentially periodic pattern,
• and adjacent MXene portions being separated from one another by an average separation distance of from about 0.1 micrometers to about 100 micrometers, and
• the MXene portions optionally defining an average thickness of from about 10 nm to about 5 micrometers.

A metal semiconductor field effect transistor, comprising:

• a source electrode;
• a drain electrode;
• and
• a gate electrode,
• a resistive path channel being defined between the source electrode and the gate electrode,
• the gate electrode comprising a MXene material configured to perform as a rectifying Schottky contact,
• the MXene material of the gate electrode being essentially transparent, and
• the metal semiconductor field effect transistor being configured as an optical field effect transistor controllable by illumination of the MXene material;
• and
• a first semiconducting substrate on which the gate electrode is superposed,
• optionally a second semiconducting substrate on which the first semiconducting substrate is disposed, the second semiconducting substrate defining a heterojunction with the first semiconducting substrate and the first semiconducting substrate has a bandgap energy (Eg) greater than a bandgap energy (Eg) of the second semiconducting substrate.

A high electron mobility field effect transistor, comprising:

• a source electrode;
• a drain electrode;
• a gate electrode;
• and
• a resistive path channel being defined between the source electrode and the gate electrode, the resistive path channel comprising a heterojunction,
• the gate electrode comprising a MXene material configured to perform as a rectifying Schottky contact,
• the MXene material being essentially transparent, and
• the high electron mobility field effect transistor being configured as an optical field effect transistor controllable by illumination of the MXene material;
• and
• a first semiconducting substrate on which the gate electrode is superposed,
• optionally a second semiconducting substrate on which the first semiconducting substrate is disposed, the second semiconducting substrate defining a heterojunction with the first semiconducting substrate and the first semiconducting substrate has a bandgap energy (Eg) greater than a bandgap energy (Eg) of the second semiconducting substrate.

A metal oxide semiconductor field effect transistor, comprising:

• a source electrode;
• a drain electrode;
• a gate electrode;
• and
• a resistive path channel being defined between the source electrode and the gate electrode,
• one or more of the source electrode, the gate electrode, and the drain electrode comprising a MXene material configured to perform as an ohmic contact,
• the MXene material optionally being essentially transparent;
• and
• a first semiconducting substrate on which the gate electrode is superposed,
• optionally a second semiconducting substrate on which the first semiconducting substrate is disposed, the second semiconducting substrate defining a heterojunction with the first semiconducting substrate and the first semiconducting substrate has a bandgap energy (Eg) greater than a bandgap energy (Eg) of the second semiconducting substrate.