Semiconductor die with pressure and acceleration sensor elements
AssigneeInfineon Technologies Dresden GmbH
InventorsSteffen BIESELT, Dirk MEINHOLD
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Abstract
In some implementations a semiconductor die comprises a semiconductor chip. The semiconductor chip comprises a piezoresistive pressure sensor element and at least one capacitive acceleration sensor element. The piezoresistive pressure sensor element is arranged to the side of the capacitive acceleration sensor element. In some implementations, a method for producing a semiconductor die includes applying an insulation layer to the semiconductor wafer. A section of the monocrystalline cover layer may be exposed by structuring the insulation layer. A semiconductor layer having a monocrystalline section and a polycrystalline section may be generated by deposition of a semiconductor material.
Claims14
A semiconductor die comprising:
- a semiconductor chip,
- wherein the semiconductor chip comprises:
- a piezoresistive pressure sensor element, and
- at least one capacitive acceleration sensor element,
- wherein the piezoresistive pressure sensor element is arranged to a side of the at least one capacitive acceleration sensor element.
A method for producing a semiconductor die, comprising:
- providing a semiconductor wafer with a monocrystalline cover layer;
- and
- applying an insulation layer to the semiconductor wafer;
- wherein a section of the monocrystalline cover layer is exposed by structuring the insulation layer,
- wherein a semiconductor layer is produced by deposition of a semiconductor material, and
- wherein the semiconductor layer has a monocrystalline section and a polycrystalline section.
Dependencies are inferred from the claim text.