Method of exposure using extreme ultraviolet and method of manufacturing a semiconductor device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSUNGHO JANG, YOONJAE KIM, HYUCK SHIN, DONGHYUB LEE, KUL INN
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Abstract
A method of manufacturing a semiconductor includes generating plasma in an amplifying tube using gas as a gain medium; detecting a state of the plasma generated in the amplifying tube; determining a virtual laser gain based on the detected state of the plasma; controlling the state of the plasma such that the virtual laser gain is within a target range; and manufacturing the semiconductor device including performing an exposure process on a substrate using a laser beam output from the amplifying tube adjusted to have the virtual laser gain within the target range.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- generating plasma in an amplifying tube by using gas as a gain medium;
- detecting a state of the plasma generated in the amplifying tube;
- determining a virtual laser gain based on the detected state of the plasma;
- controlling the state of the plasma such that the virtual laser gain is within a target range;
- and
- manufacturing the semiconductor device comprising performing an exposure process on a substrate using a laser beam output from the amplifying tube adjusted to have the virtual laser gain within the target range.
An extreme ultraviolet (EUV) exposure method comprising:
- generating plasma in an amplifying tube to output a laser beam;
- detecting an actual laser gain by measuring power of the laser beam with a power meter;
- detecting a spectrum of light emitted from the amplifying tube responsive to the plasma by using a spectrometer;
- generating a plurality of laser gain variable candidates based on a single wavelength or a combination of two or more wavelengths selected from the spectrum of light detected by the spectrometer;
- determining a laser gain variable having a correlation equal to or higher than a predetermined percentage value with the actual laser gain from among the plurality of laser gain variable candidates;
- determining a virtual laser gain for the amplifying tube based on the determined laser gain variable;
- and
- performing an EUV exposure using a laser beam output from the amplifying tube adjusted to have the virtual laser gain.
An extreme ultraviolet (EUV) exposure method comprising:
- supplying a mixed gas into an amplifying tube;
- generating plasma by applying radio frequency (RF) power to an electrode in the amplifying tube supplied with the mixed gas;
- detecting a state of the plasma generated in the amplifying tube;
- determining a virtual laser gain based on the detected state of the plasma;
- controlling the state of the plasma such that the virtual laser gain is within a target range;
- and
- generating EUV light by reacting droplets with a laser beam output from the amplifying tube when the virtual laser gain is within the target range.
Dependencies are inferred from the claim text.