Elastic wave device, elastic waves filter, duplexer, and module
AssigneesSanan Japan Technology Corporation, University of Yamanashi
InventorsNoriyuki WATANABE, Hiroshi NAKAMURA, Shoji KAKIO
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Abstract
An elastic wave device that excites main vibration of an SH mode includes a piezoelectric layer formed from a piezoelectric material, a carrier substrate, and an IDT electrode formed on the piezoelectric layer. When a wavelength of an elastic wave, which is determined by an electrode cycle P of the IDT electrode, is represented by λ, the piezoelectric layer has a thickness of 0.15λ or more and 1.5λ or less. The carrier substrate has an acoustic anisotropy, and is arranged in a crystal orientation that reduces unnecessary vibrations of an SV mode and a vertical L-mode.
Claims21
An elastic wave device that excites main vibration of an SH mode, comprising:
- a piezoelectric layer formed from a piezoelectric material;
- a carrier substrate;
- and an IDT electrode formed on the piezoelectric layer, wherein
- when a wavelength of an elastic wave, which is determined by an electrode cycle of the IDT electrode, is represented by λ, the piezoelectric layer has a thickness of 0.15λ or more and 1.5λ or less;
- and
- the carrier substrate has an acoustic anisotropy, and is arranged in a crystal orientation that reduces unnecessary vibrations of an SV mode and a vertical L-mode.
13-17. (canceled)
Dependencies are inferred from the claim text.