US 2022/0069260 A1Published application

Display device and method for manufacturing the same

AssigneeLG Display Co., Ltd.

InventorsJongsoo HAN, Sangyong LEE, Sangmoo PARK

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Abstract

Discussed are a display device and a method for manufacturing the same, in which a source electrode and a drain electrode are disposed under an active layer of a thin film transistor, thereby simplifying a manufacturing process of the device, reducing a manufacturing time thereof, and reducing a manufacturing cost thereof. To this end, the source electrode, the drain electrode and a light-blocking layer are disposed on a substrate, and constitute the same layer and are made of the same material. An interlayer insulating layer is disposed thereon. A first contact-hole and a second contact-hole are disposed in the interlayer insulating layer. A first connection line connects the source electrode and an active layer to each other, and a second connection line connects the drain electrode and the active layer to each other, whereby the array substrate of the display device can be manufactured using the total of 7 mask processes.

Claims19

Dependent claims

A display device comprising:

a first source electrode and a first drain electrode disposed on a substrate and spaced apart from each other;
a light-blocking layer disposed on the substrate, wherein the light-blocking layer, the first source electrode and the first drain electrode constitute the same layer, and are made of the same material;
an interlayer insulating layer disposed on a top face of each of the first source electrode, the first drain electrode and the light-blocking layer;
an first active layer disposed on the interlayer insulating layer to expose a portion of the interlayer insulating layer;
a gate insulating layer disposed on the first active layer to expose a portion of the interlayer insulating layer and a portion of the first active layer;
a first contact-hole and a second contact-hole passing through the interlayer insulating layer, the first active layer and the gate insulating layer, and respectively corresponding to the first source electrode and the first drain electrode;
a first gate electrode disposed on the gate insulating layer;
a first connection line connecting the first source electrode and the first active layer to each other via the first contact-hole;
a second connection line connecting the first drain electrode and the first active layer to each other via the second contact-hole;
a protective layer disposed on the first gate electrode;
and
a planarization layer disposed on the protective layer.

9 more elements

A method for manufacturing a display device, the display device including a driving thin-film transistor, a switching thin-film transistor, and a sensing thin-film transistor on a substrate, the method comprising:

(a) forming a source electrode, a drain electrode, and a light-blocking layer on the substrate, wherein the source electrode and the drain electrode are spaced from each other, and wherein the source electrode, the drain electrode, and the light-blocking layer constitute the same layer, and are made of the same material;
(b) forming an interlayer insulating layer on the source electrode, the drain electrode and the light-blocking layer, and forming a first contact-hole and a second contact-hole in the interlayer insulating layer to respectively correspond to the source electrode and the drain electrode;
(c) forming an active layer on the interlayer insulating layer such that a portion of the interlayer insulating layer, the first contact-hole and the second contact-hole are exposed;
(d) forming a gate insulating layer on the active layer so that a portion of the interlayer insulating layer, a portion of the active layer, the first contact-hole and the second contact-hole are exposed, forming a gate electrode on the gate insulating layer, forming a first connection line connecting the source electrode and the active layer to each other via the first contact-hole, and forming a second connection line connecting the drain electrode and the active layer to each other via the second contact-hole;
(e) forming a protective layer on the gate electrode, forming a planarization layer on the protective layer, and forming a third contact-hole exposing the first connection line in the planarization layer and the protective layer;
(f) forming a first electrode on the planarization layer so that the first electrode is connected to the first connection line via the third contact-hole;
(g) forming a bank layer to cover an outer region of the first electrode and expose an center portion of the first electrode;
and
(h) forming a light-emissive layer on the first electrode, and forming a second electrode on the light-emissive layer.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/459,619Filed 27 Aug 2021
Priority: KR 10-2020-01109681 Sep 2020
Published: 3 Mar 2022
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10K 59/123
Active-matrix OLED [AMOLED] displays: connection of the pixel electrodes to the thin film transistors [TFT]
H10D 86/441
Characterised by multiple TFTs: interconnections, e.g. scanning lines
H10D 86/60
Characterised by multiple TFTs: wherein the TFTs are in active matrices
H10K 59/122
Active-matrix OLED [AMOLED] displays: pixel-defining structures or layers, e.g. banks