Perovskite film and manufacturing method thereof

A manufacturing method of a perovskite film, comprising:

• coating a perovskite precursor material in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M;
• and
• performing an infrared light irradiation on the perovskite precursor material to cure the perovskite precursor material to form a thin film comprising a compound represented by formula (1),
• (RNH3)2MA(n−1)M1nX(3n+1) formula (1),
• wherein each R is independently H, a C1 to C20 alkyl group, a C1 to C20 cycloalkyl group, a C1 to C20 carboxyl group, or a C1 to C20 aralkyl group;
• MA is methylamine;
• M1 is Ca, Sr, Cd, Cu, Ni, Mn, Fe, Co, Pd, Ge, Sn, Pb, Yb, Eu, or a combination thereof;
• X is Cl, Br, I, or a combination thereof;
• n is an integer of 1 to 50,
• wherein the perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure.