Resistive random access memory with preformed filaments
AssigneeLam Research Corporation
InventorsHyungsuk YOON, Thorsten LILL, Yang PAN
Life of this patent
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Abstract
A method for fabricating a plurality of resistive random access memory (RRAM) cells includes providing a substrate including a memory medium arranged on an underlying layer; creating channel holes in the memory medium having a first critical dimension in a range from 1 nm to 20 nm; depositing switching material defining a filament of the RRAM cells in the channel holes; depositing a top electrode of the RRAM cells on the memory medium and the switching material; and separating adjacent ones of the RRAM cells by etching the top electrode and the memory medium between adjacent ones of the channel holes.
Claims14
A method for fabricating a plurality of resistive random access memory (RRAM) cells, comprising:
- providing a substrate including a memory medium arranged on an underlying layer;
- creating channel holes in the memory medium having a first critical dimension in a range from 1 nm to 20 nm;
- depositing switching material defining a filament of the RRAM cells in the channel holes;
- depositing a top electrode of the RRAM cells on the memory medium and the switching material;
- and
- separating adjacent ones of the RRAM cells by etching the top electrode and the memory medium between adjacent ones of the channel holes.
Dependencies are inferred from the claim text.