Resistive memory with a switching zone between two dielectric regions having different doping and/or dielectric constants

A resistive memory structure comprising at least one memory cell provided with a first electrode and a second electrode arranged on either side of a dielectric layer, the memory cell being capable of reversibly switching between a “high resistance” state and a “low resistance” state, said dielectric layer including a switching zone forming a preferred conduction path for the current when said memory cell is in said low resistance state,

• said dielectric layer including a first region and a second region adjoining one another in such a way as to form an interface between said first and second regions, said first and second region being made of the same dielectric material and having different compositions in terms of doping element(s) or concentration of doping element or being respectively made of a first dielectric material and a second dielectric material having different respective dielectric constants,
• the first electrode and the second electrode being arranged facing said interface between said first region and said second region, said interface extending in a given plane passing through the dielectric layer and passing through the electrodes so as to locate said switching zone at said interface zone.