Semiconductor storage device
AssigneeKioxia Corporation
InventorNatsuumi TAKAHASHI
Life of this patent
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Abstract
According to one embodiment, the semiconductor storage device includes a first wiring extending in a first direction, a second wiring extending in a second direction intersecting the first direction, a first semiconductor device extending in a third direction intersecting the first direction and the second direction, connected to the first wiring and the second wiring, and including a first selector layer and a first variable resistance layer, a first insulator extending in the second and third directions and adjacent to the first semiconductor device in the first direction, and a second insulator extending in the second and third directions and including an air gap disposed between the first semiconductor device and the first insulator.
Claims17
A semiconductor storage device comprising:
- a first wiring extending in a first direction;
- a second wiring extending in a second direction intersecting the first direction;
- a first semiconductor device extending in a third direction intersecting the first direction and the second direction, connected to the first wiring and the second wiring, and including a first selector layer and a first variable resistance layer;
- a first insulator extending in the second and third directions and adjacent to the first semiconductor device in the first direction;
- and
- a second insulator extending in the second and third directions and including an air gap disposed between the first semiconductor device and the first insulator.
A method for fabricating a semiconductor storage device, comprising:
- forming a semiconductor device extending in a vertical direction and including a selector layer and a variable resistance layer;
- forming a sacrifical layer adjacent the semiconductor device and extending in a first lateral direction and a second lateral direction;
- forming an insulator over the sacrifical layer;
- and
- removing the sacrifical layer to form an air gap between the semiconductor device and the insulator.
Dependencies are inferred from the claim text.