Resistive memory device and reliability enhancement method thereof

A resistive memory device comprising:

• a memory cell array comprising a plurality of memory cells;
• a sensing amplifier coupled to the memory cell array;
• and
• a controller coupled to the sensing amplifier and configured to:
• perform a forming operation on the memory cells;
• enable the sensing amplifier to read the formed memory cells to respectively obtain a plurality of formed currents;
• set a first reference current according to a statistic value of the formed currents;
• perform a setting operation on the memory cells;
• enable the sensing amplifier to calculate a ratio between a set current of each of the memory cells and the first reference current, wherein the controller judges a physical status of each of the memory cells according to the ratio;
• and
• determine whether to perform a fix operation of each of the memory cells or not according to the physical status of each of the memory cells.