Memory electrodes and formation thereof
AssigneeMicron Technology, Inc.
InventorsJoseph M. McCrate, Robert J. Gleixner
Life of this patent
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Abstract
The present disclosure includes apparatuses and methods related to forming memory cells having memory element dimensions. For example, a memory cell may include a first electrode, a select-element material between the first electrode and a second electrode, and a lamina between the select-element material and the first electrode. The first electrode may comprise a first portion, proximate to the lamina, having a first lateral dimension; and a second portion, distal from the lamina, having a second lateral dimension, wherein the second lateral dimension is greater than the first lateral dimension.
Claims20
A memory cell, comprising:
- a first electrode;
- a select-element material between the first electrode and a second electrode;
- and
- a lamina between the select-element material and the first electrode;
- wherein the first electrode comprises:
- a first portion, proximate to the lamina, having a first lateral dimension;
- and
- a second portion, distal from the lamina, having a second lateral dimension, wherein the second lateral dimension is greater than the first lateral dimension.
A method for forming a memory cell, comprising:
- forming a stack of materials including a first electrode material, a first dielectric lamina material, a select-element material, and a second electrode material, wherein the first dielectric lamina material is between the first electrode material and the select-element material, and wherein the select-element material is between the first dielectric lamina material and the second electrode;
- wherein forming the stack of materials comprises changing a first lateral dimension of a first portion, proximate to the first dielectric lamina material, of the first electrode material to be less than a second lateral dimension of a second portion, distal from the first dielectric lamina material, of the first electrode material and to be less than a lateral dimension of the select-element material.
A method for forming a memory cell, comprising:
- forming a stack of materials, the stack of materials including a first electrode material, a select-element material, a first dielectric lamina material between the first electrode material and the select-element material, a second electrode material, and a second dielectric lamina material between the select-element material and the second electrode material,
- wherein forming the stack of materials comprises changing a lateral dimension of a first portion of the first electrode by reducing a radius of curvature of walls of the first portion of the first electrode at an interface with the first dielectric lamina material.
Dependencies are inferred from the claim text.