Method for forming a hard mask with a tapered profile

A method for forming a memory cell, the method comprising:

• depositing a memory film over a substrate, wherein the memory film comprises a bottom electrode layer, a top electrode layer, and a data storage film between the top and bottom electrode layers;
• depositing a hard mask film over the memory film;
• patterning the hard mask film to form a hard mask;
• after the patterning, bombarding a hard mask sidewall of the hard mask with ions directed at an ion angle relative to an axis orthogonal to a bottom surface of the hard mask;
• and
• performing an etch into the data storage film with the hard mask in place to form a data storage structure underlying the hard mask.

An integrated circuit (IC) comprising:

• an interconnect structure comprising an alternating stack of wires and vias, wherein the vias comprise a bottom electrode via (BEVA) and a top electrode via (TEVA);
• and
• a memory cell in the interconnect structure and comprising:
• a bottom electrode overlying the BEVA;
• a magnetic tunnel junction (MTJ) overlying the bottom electrode;
• and
• a top electrode overlying the MTJ and underlying the TEVA, wherein a sidewall of the top electrode is oriented at an angle of about 75-82 degrees relative to a bottom surface of the top electrode.