Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYU-FENG YIN, TAI-YEN PENG, AN-SHEN CHANG, HAN-TING TSAI, QIANG FU, CHUNG-TE LIN
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Abstract
The present disclosure provides a semiconductor structure, including a substrate, including a first region and a second region adjacent to the first region, a magnetic tunnel junction (MTJ) over the first region, a spacer on a sidewall of the MTJ, a hard mask over the MTJ, a first dielectric layer laterally surrounding the spacer and the hard mask, a top electrode over the hard mask, and an etch stop stack laterally surrounding the top electrode.
Claims20
A semiconductor structure, comprising:
- a substrate, comprising a first region and a second region adjacent to the first region;
- a magnetic tunnel junction (MTJ) over the first region,
- a spacer on a sidewall of the MTJ;
- a hard mask over the MTJ;
- a first dielectric layer laterally surrounding the spacer and the hard mask;
- a top electrode over the hard mask;
- and
- an etch stop stack laterally surrounding the top electrode.
A semiconductor structure, comprising:
- a substrate,
- a first magnetic tunnel junction (MTJ) over the substrate;
- a second MTJ adjacent to the first MTJ;
- a top electrode laterally extending over the first MTJ and the second MTJ, wherein a bottom surface of the top electrode is substantially flat.
A method for fabricating a semiconductor structure, comprising:
- providing a substrate;
- forming a first magnetic tunnel junction (MTJ) over a first region of the substrate;
- forming a first conductive via over a second region of the substrate adjacent to the first region;
- forming an etch stop stack over the first region and the second region,
- forming a recess in the etch stop stack by an etching operation;
- and
- forming a top electrode in the recess.
Dependencies are inferred from the claim text.