Optoelectronic semiconductor component and method for producing the same

(canceled)

An optoelectronic semiconductor device comprising

• an active zone comprising a sub-layer which is suitable for forming a quantum-well structure,
• wherein, in the active zone, quantum dot structures are formed in a central area of the optoelectronic semiconductor device and no quantum dot structures are formed in an edge area of the opto-electronic semiconductor device.

A method for manufacturing an optoelectronic semiconductor device, comprising:

• patterning a first main surface of a growth substrate, so that a first main surface comprises horizontal regions and inclined flanks;
• epitaxially growing a semiconductor layer structure comprising sub-layers for forming an active zone comprising quantum well structures over the first main surface, so that the layer structure has a smaller layer thickness in the region of the inclined flanks than in the horizontal regions, and
• singulating individual optoelectronic semiconductor devices in the region of the inclined flanks, so that the semiconductor layer structure which has been grown over the horizontal regions of the first main surface is present in a central area of the optoelectronic semiconductor device, and the semiconductor layer structure which has been grown over the inclined flanks is present in an edge region of the optoelectronic semiconductor device.

17-18. (canceled)