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AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsKoichi KOKUBUN, Mitsuhiro SENGOKU
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A semiconductor device includes a photosensitive element, an insulating region, and a quench element. The photosensitive element includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type on the first semiconductor region, a third semiconductor region of a second conductivity type on the second semiconductor region, and a fourth semiconductor region of the second conductivity type around the second and third semiconductor regions. An impurity concentration of the first conductivity type in the second semiconductor region is higher than that in the first semiconductor region. An impurity concentration of the second conductivity type in the fourth semiconductor region is lower than that of the third semiconductor region. The insulating region is around the first and fourth semiconductor regions. The quench element is electrically connected to the third semiconductor region.
A semiconductor device, comprising:
The semiconductor device according to claim 8, wherein a total of the thickness of the third semiconductor region and a thickness of the second semiconductor region in the thickness direction is greater than 0.8 μm and less than 1.6 μm.
A photosensor, comprising:
Dependencies are inferred from the claim text.