Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKengo AKIMOTO, Tatsuya HONDA, Norihito SONE
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Abstract
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
Claims17
(canceled)
A semiconductor device comprising:
- a gate electrode over a substrate;
- a first gate insulating film over the gate electrode, the first gate insulating film comprising silicon nitride;
- a second gate insulating film over the first gate insulating film, the second gate insulating film comprising silicon oxide;
- and
- an oxide semiconductor film including a microcrystal over the second gate insulating film,
- wherein the oxide semiconductor film comprises indium and zinc,
- wherein the oxide semiconductor film includes a first region and a second region,
- wherein the first region has higher crystallinity than the second region, and
- wherein the second region is located over the first region.
A semiconductor device comprising:
- a gate electrode over a substrate;
- a first gate insulating film over the gate electrode, the first gate insulating film comprising silicon nitride;
- a second gate insulating film over the first gate insulating film, the second gate insulating film comprising silicon and oxygen;
- an oxide semiconductor film including a microcrystal over the second gate insulating film;
- and
- a passivation film over the oxide semiconductor film,
- wherein the passivation film comprises silicon and oxygen, and
- wherein the oxide semiconductor film comprises indium and zinc,
- wherein the oxide semiconductor film includes a first region and a second region,
- wherein the first region has higher crystallinity than the second region, and
- wherein the second region is located over the first region.
Dependencies are inferred from the claim text.