Integrated Assemblies and Methods of Forming Integrated Assemblies
AssigneeMicron Technology, Inc.
InventorsDavid K. Hwang, Richard J. Hill, Gurtej S. Sandhu
Life of this patent
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Abstract
Some embodiments include an integrated assembly having an upwardly-extending structure with a sidewall surface. Two-dimensional-material extends along the sidewall surface. First electrostatic-doping-material is adjacent a lower region of the two-dimensional-material, insulative material is adjacent a central region of the two-dimensional-material, and second electrostatic-doping-material is adjacent an upper region of the two-dimensional-material. A conductive-gate-structure is over the first electrostatic-doping-material and adjacent to the insulative material. Some embodiments include methods of forming integrated assemblies.
Claims34
An integrated assembly, comprising:
- an upwardly-extending structure comprising a first insulative material, the upwardly-extending structure having a pair of sidewall surfaces along a cross-section, and having a top surface extending between the sidewall surfaces;
- one of the sidewall surfaces being a first sidewall surface and the other of the sidewall surfaces being a second sidewall surface;
- two-dimensional-material adjacent the first sidewall surface and extending along the first sidewall surface;
- the two-dimensional-material having a lower region, an upper region, and a central region between the upper and lower regions;
- first electrostatic-doping-material adjacent the lower region of the two-dimensional-material;
- second insulative material adjacent the central region of the two-dimensional-material and on an opposing side of the two-dimensional-material from the first sidewall surface of the upwardly-extending structure;
- a conductive-gate-structure over the first electrostatic-doping-material, adjacent the second insulative material, and proximate the central region of the two-dimensional-material;
- and
- second electrostatic-doping-material over the conductive-gate-structure and adjacent the upper region of the two-dimensional-material.
An integrated assembly, comprising:
- first conductive lines extending along a first direction;
- structures extending upwardly from the first conductive lines;
- the structures comprising first insulative material;
- the structures being spaced from one another by gaps along the first direction;
- two-dimensional-material extending along upper surfaces of the first conductive lines within the gaps, and along outer peripheries of the structures;
- first electrostatic-doping-material over the first conductive lines and adjacent lower regions of the two-dimensional-material adjacent the structures;
- second insulative material over the first electrostatic-doping-material and adjacent central regions of the two-dimensional-material adjacent the structures;
- second conductive lines extending along a second direction which crosses the first direction;
- the second conductive lines being over the first electrostatic-doping-material and being adjacent the second insulative material;
- a second electrostatic-doping-material over the second conductive lines and over the second insulative material, the second electrostatic-doping-material being adjacent upper regions of the two-dimensional-material adjacent the structures;
- and
- storage elements coupled with the upper region of the two-dimensional-material.
A method of forming an integrated assembly, comprising:
- forming first structures extending upwardly from a substrate;
- the first structures being spaced from one another by gaps along a first direction;
- forming two-dimensional-material along an upper surface of the substrate within the gaps, and along outer peripheries of the first structures;
- forming first electrostatic-doping-material over the substrate and adjacent lower regions of the two-dimensional-material adjacent the first structures;
- forming insulative material over the first electrostatic-doping-material and adjacent central regions of the two-dimensional-material adjacent the first structures;
- forming a conductive-gate-structure over the first electrostatic-doping-material and adjacent the insulative material;
- and
- forming second electrostatic-doping-material over the conductive-gate-structure and over the second insulative material, the second electrostatic-doping-material being adjacent upper regions of the two-dimensional-material adjacent the first structures.
Dependencies are inferred from the claim text.