Multi-metal lateral layer devices with internal bias generation
AssigneeApplied Materials, Inc.
InventorMilan Pesic
Life of this patent
Estimating the term…
Abstract
A ferroelectric capacitor or a ferroelectric transistor may include a first metal layer having a first metal having a first work function, and a second metal layer having a second metal having a second work function. The capacitor may also include a a vertical electrode and a ferroelectric material that surrounds the vertical electrode and forms a plurality of switching regions in the ferroelectric material. The transistor may include a vertical channel, a vertical buffer layer that surround the vertical channel, and a ferroelectric material that surrounds the vertical buffer layer and forms a plurality of gate regions in the ferroelectric material.
Claims20
A ferroelectric capacitive device comprising:
- a plurality of metal layers comprising:
- a first metal layer comprising a first metal having a first work function;
- and
- a second metal layer comprising a second metal having a second work function that is different from the first work function, wherein the first metal layer is approximately parallel to the second metal layer;
- a vertical contact that contacts the first metal layer;
- a vertical electrode that is approximately perpendicular to the first metal layer and approximately perpendicular to the second metal layer;
- and
- a ferroelectric material that surrounds the vertical electrode and contacts the vertical electrode and the plurality of metal layers to form the ferroelectric capacitive device with a plurality of switching regions in the ferroelectric material comprising:
- a first switching region between the vertical electrode and the first metal layer;
- and
- a second switching region between the vertical electrode and the second metal layer.
A method of fabricating a ferroelectric capacitive device, the method comprising:
- depositing a plurality of metal layers comprising:
- a first metal layer comprising a first metal having a first work function;
- and
- a second metal layer comprising a second metal having a second work function that is different from the first work function, wherein the first metal layer is approximately parallel to the second metal layer;
- etching a vertical hole in the plurality of metal layers;
- and
- filling the vertical hole with:
- a vertical electrode that is approximately perpendicular to the first metal layer and approximately perpendicular to the second metal layer;
- and
- a ferroelectric material that surrounds the vertical electrode and contacts the vertical electrode and the plurality of metal layers to form the ferroelectric capacitive device with a plurality of switching regions in the ferroelectric material comprising:
- a first switching region between the vertical electrode and the first metal layer;
- and
- a second switching region between the vertical electrode and the second metal layer.
A ferroelectric transistor comprising:
- a plurality of metal layers comprising:
- a first metal layer comprising a first metal having a first work function;
- a second metal layer comprising a second metal having a second work function that is different from the first work function, wherein the first metal layer is approximately parallel to the second metal layer;
- a vertical contact that contacts the first metal layer;
- a vertical channel that is approximately perpendicular to the first metal layer and approximately perpendicular to the second metal layer;
- a vertical buffer layer that surround the vertical channel;
- and
- a ferroelectric material that surrounds the vertical buffer layer and contacts the plurality of metal layers to form the ferroelectric transistor with a plurality of gate regions in the ferroelectric material comprising:
- a first gate region between the vertical channel and the first metal layer;
- and
- a second gate region between the vertical channel and the second metal layer.
Dependencies are inferred from the claim text.