# US 2022/0069130 A1 · Thin-film transistor including oxide semiconductor layer, method of manufacturing the same, and display apparatus including the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0069130 A1 - Document ID: US20220069130A1 - Status: Published application - Kind: A1 - Application number: 17/524,255 - Filed: 2021-11-11 - Published: 2022-03-03 - Earliest claimed: 2017-06-27 - Assignees: LG Display Co., Ltd. - Applicants: LG Display Co., Ltd. - Inventors: HeeSung Lee; SungKi Kim; MinCheol Kim; SeungJin Kim; JeeHo Park; Seoyeon Im - Web page: https://patentgrep.com/patent/US20220069130A1 ## CPC - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - G02F 1/133514: {Colour filters} - G02F 1/134309: {characterised by their geometrical arrangement} - G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} - H10D 30/031: {of thin-film transistors [TFT]} - H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)} - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/60: wherein the TFTs are in active matrices - H10D 99/00: Subject matter not provided for in other groups of this subclass - H10K 59/1213: {the pixel elements being TFTs} - H10K 59/122: Pixel-defining structures or layers, e.g. banks - H10K 59/38: comprising colour filters or colour changing media [CCM] - G02F 1/133357: {Planarisation layers} - G02F 1/13685: {Top gates} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25. ## Claims ### Claim 1 A display apparatus, comprising: a substrate; a thin-film transistor disposed on the substrate; and a first electrode electrically connected to the thin-film transistor, wherein the thin-film transistor includes an oxide semiconductor layer including indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), wherein a content of In in the oxide semiconductor layer is greater than a content of Ga, wherein a content of In in the oxide semiconductor layer is greater than a content of Sn, wherein the oxide semiconductor layer has a first layer and a second layer, the second layer being stacked on the first layer, and wherein an O content of the second layer is greater than an O content of the first layer. ### Claim 2 (depends on 1) The display apparatus according to claim 1, wherein a content ratio (Sn/In) of Sn to In is 0.1 to 0.25. ### Claim 3 (depends on 1) The display apparatus according to claim 1, wherein the content of In is substantially equal to a content of Zn. ### Claim 4 (depends on 1) The display apparatus according to claim 1, wherein the oxide semiconductor layer has a thickness of 20 nm or more. ### Claim 5 (depends on 1) The display apparatus according to claim 1, wherein the oxide semiconductor layer has a mobility of 18 cm2/V·s or more. ### Claim 6 (depends on 1) The display apparatus according to claim 1, wherein the oxide semiconductor layer has a carrier concentration of 5×1017 EA/cm3 or more. ### Claim 7 (depends on 1) The display apparatus according to claim 1, wherein the oxide semiconductor layer has a packing density of 6.5 g/cm3 or more. ### Claim 8 (depends on 1) The display apparatus according to claim 1, wherein the oxide semiconductor layer has a spin density of 2.0×1017 spins/cm3 or less. ### Claim 9 (depends on 1) The display apparatus according to claim 1, the thin-film transistor further comprising a gate electrode, wherein the first layer is disposed closer to the gate electrode than the second layer. ### Claim 10 (depends on 1) The display apparatus according to claim 1, wherein a content ratio of each of In, Ga, Zn, and Sn based on total amount of In, Ga, Zn, and Sn is substantially same in the first layer and the second layer. ### Claim 11 (depends on 1) The display apparatus according to claim 1, wherein the second layer has a thickness equivalent to 5 to 20% of a thickness of the oxide semiconductor layer. ### Claim 12 (depends on 1) The display apparatus according to claim 1, the thin-film transistor further comprising a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, the source electrode and the drain electrode being disposed so as to be spaced apart from each other, wherein a thickness of a region of the second layer that does not overlap the source electrode and the drain electrode is greater than a thickness of a region of the second layer that overlaps at least one of the source electrode or the drain electrode. ### Claim 13 (depends on 1) The display apparatus according to claim 1, wherein the content of In is 1.5 to 5 times the content of Ga. ### Claim 14 A display apparatus, comprising: a substrate; a thin-film transistor disposed on the substrate; and a first electrode electrically connected to the thin-film transistor, wherein the thin-film transistor includes an oxide semiconductor layer including indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), wherein the content of In is substantially equal to the content of Zn, wherein the content of In in the oxide semiconductor layer is greater than the content of Ga, and wherein the content of In in the oxide semiconductor layer is greater than the content of Sn. ### Claim 15 (depends on 14) The display apparatus according to claim 14, wherein the oxide semiconductor layer has a first layer and a second layer, the second layer being stacked on the first layer, and wherein an O content of the second layer is greater than an O content of the first layer. ### Claim 16 (depends on 15) The display apparatus according to claim 15, the thin-film transistor further comprising a gate electrode, wherein the first layer is disposed closer to the gate electrode than the second layer. ### Claim 17 (depends on 15) The display apparatus according to claim 15, wherein a content ratio of each of In, Ga, Zn, and Sn based on total amount of In, Ga, Zn, and Sn is substantially same in the first layer and the second layer. ### Claim 18 A display apparatus, comprising: a substrate; a thin-film transistor disposed on the substrate; and a first electrode electrically connected to the thin-film transistor, wherein the thin-film transistor includes an oxide semiconductor layer including indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), wherein the oxide semiconductor layer has a packing density of 6.5 g/cm3 or more, wherein a content of In in the oxide semiconductor layer is greater than a content of Ga, and wherein a content of In in the oxide semiconductor layer is greater than a content of Sn. ### Claim 19 (depends on 18) The display apparatus according to claim 18, wherein the oxide semiconductor layer has a first layer and a second layer, the second layer being stacked on the first layer, and wherein an O content of the second layer is greater than an O content of the first layer. ### Claim 20 (depends on 19) The display apparatus according to claim 19, wherein a content ratio of each of In, Ga, Zn, and Sn based on total amount of In, Ga, Zn, and Sn is substantially same in the first layer and the second layer.