Semiconductor device

A semiconductor device, comprising:

• a substrate having a contact region;
• a first insulating layer on the substrate and having a first contact hole connected to the contact region;
• a first seeding layer on the contact region in the first contact hole and including a first crystalline metal;
• and
• a first contact metal on the first seeding layer, filling the first contact hole, and including a second crystalline metal,
• wherein the second crystalline metal is substantially lattice-matched to the first crystalline metal at an interface between the first and second crystalline metals.

A semiconductor device, comprising:

• a fin-type active region extending on a substrate in a first direction, parallel to an upper surface of the substrate;
• a gate structure extending across the fin-type active region in a second direction, which is parallel to the upper surface of the substrate and different from the first direction;
• a source/drain region in the fin-type active region on one side of the gate structure;
• a first contact structure connected to the source/drain region;
• and
• a second contact structure connected to the gate structure, wherein:
• at least one of the first and second contact structures includes a seeding layer on at least one of the gate structure and the source/drain region, and a contact plug on the seeding layer,
• the seeding layer includes a first crystalline conductive material, the contact plug includes a second crystalline conductive material, and
• the first and second crystalline conductive materials have a same crystal structure, and a difference between lattice constants of the first and second crystalline conductive materials is less than 1%.