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US 2022/0069128 A1Published application
Semiconductor devices including a stress pattern
AssigneeSamsung Electronics Co., Ltd.
InventorsSung Min Kim, Hyo Jin Kim, Dae Won Ha
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Abstract
Semiconductor devices are provided. A semiconductor device includes a fin structure including a stress structure and a semiconductor region that are sequentially stacked on a substrate. The semiconductor device includes a field insulation layer on a portion of the fin structure. The semiconductor device includes a gate electrode on the fin structure. Moreover, the stress structure includes an oxide.
Claims20
A semiconductor device comprises:
- a substrate;
- a fin structure on the substrate;
- a field insulation layer on a sidewall portion of the fin structure;
- and
- a gate electrode on the fin structure, the gate electrode intersecting the fin structure,
- wherein the fin structure includes a first semiconductor pattern, a stress pattern, and a second semiconductor pattern that are sequentially stacked on the substrate,
- wherein the stress pattern comprises an oxide including germanium, and
- wherein a first angle between an upper surface of the first semiconductor pattern and a first line parallel to an upper surface of the substrate is different from a second angle between a lower surface of the second semiconductor pattern and a second line parallel to the upper surface of the substrate.
5 more elements
A semiconductor device comprises:
- a substrate;
- a fin structure on the substrate;
- a field insulation layer on a sidewall portion of the fin structure;
- and
- a gate electrode on the fin structure, the gate electrode intersecting the fin structure,
- wherein the fin structure includes a first semiconductor pattern, a stress pattern, and a second semiconductor pattern that are sequentially stacked on the substrate,
- wherein the stress pattern comprises an oxide including germanium, and
- wherein a germanium concentration in the stress pattern changes as a distance from an upper surface of the substrate increases.
5 more elements
A semiconductor device comprises:
- a substrate including a buried insulation layer;
- a fin structure protruding from an upper surface of the buried insulation layer and extending in a first direction;
- a field insulation layer on a sidewall portion of the fin structure;
- and
- a gate electrode on the fin structure and the field insulation layer, the gate electrode extending in a second direction different from the first direction,
- wherein the fin structure includes a stress pattern and a first semiconductor pattern that are sequentially stacked on the buried insulation layer, and
- wherein the stress pattern comprises an oxide including germanium.
4 more elements
Dependencies are inferred from the claim text.