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US 2022/0069127 A1Published application
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChun-Yu Chen, Bo-Lin Huang, Jhong-Yi Huang, Keng-Jen Lin, Yu-Shu Lin
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Abstract
A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming recesses adjacent to two sides of the gate structure, forming a buffer layer in the recesses, forming a first linear bulk layer on the buffer layer, forming a second linear bulk layer on the first linear bulk layer, forming a bulk layer on the second linear bulk layer, and forming a cap layer on the bulk layer.
Claims18
A method for fabricating a semiconductor device, comprising:
- forming a gate structure on a substrate;
- forming recesses adjacent to two sides of the gate structure;
- forming a buffer layer in the recesses;
- forming a first linear bulk layer on the buffer layer;
- and
- forming a bulk layer on the first linear bulk layer.
3 more elements
A semiconductor device, comprising:
- a gate structure on a substrate;
- and
- epitaxial layers adjacent to two sides of the gate structure, wherein the each of the epitaxial layers comprises:
- a buffer layer;
- a first linear bulk layer on the buffer layer;
- and
- a bulk layer on the first linear bulk layer.
4 more elements
Dependencies are inferred from the claim text.