Semiconductor device with unified transistor structure and voltage regulator diode
AssigneeRohm Co., Ltd.
InventorKentaro NASU
Life of this patent
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Abstract
A semiconductor device includes a semiconductor layer that has a transistor structure including a p type source region, a p type drain region, an n type body region between the p type source region and the p type drain region, and a gate electrode facing the n type body region and a voltage-regulator diode that is disposed at the semiconductor layer and that has an n type portion connected to the p type source region and a p type portion connected to the gate electrode, in which the transistor structure and the voltage-regulator diode are unified into a single-chip configuration.
Claims13
1-10. (canceled)
A semiconductor device comprising:
- a semiconductor layer that has a transistor structure including a source region of a first conductivity type, a drain region of the first conductivity type, a body region of a second conductivity type between the source region and the drain region, and a gate electrode facing the body region;
- and
- a voltage-regulator diode disposed at the semiconductor layer, the voltage-regulator diode having a first portion of the second conductivity type connected to the source region through a first conductive path and a second portion of the first conductivity type electrically connected to the gate electrode by a metal member through a second conductive path electrically separated from the first conductive path, the voltage-regulator diode having a capability allowing a reverse current to flow only in a first direction,
- wherein the transistor structure and the voltage-regulator diode are unified into a single-chip configuration, and
- the voltage-regulator diode is made of an impurity region disposed in the semiconductor layer.
A semiconductor device comprising:
- a semiconductor layer that has a transistor structure including a source region of a first conductivity type, a drain region of the first conductivity type, a body region of a second conductivity type between the source region and the drain region, and a gate electrode facing the body region;
- and
- a voltage-regulator diode disposed at the semiconductor layer, the voltage-regulator diode having a first portion of the second conductivity type connected to the source region through a first conductive path and a second portion of the first conductivity type electrically connected to the gate electrode by a metal member through a second conductive path electrically separated from the first conductive path,
- wherein the transistor structure and the voltage-regulator diode are unified into a single-chip configuration,
- the first conductive path includes a source metal connected to the source region and the body region,
- the metal member includes a gate finger surrounding the source metal, and
- the voltage-regulator diode is made of an impurity region disposed in the semiconductor layer.
Dependencies are inferred from the claim text.