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US 2022/0069113 A1Published application
Semiconductor structures and manufacturing methods thereof
AssigneeEnkris Semiconductor, Inc.
InventorKai CHENG
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Abstract
The present disclosure provides semiconductor structures and methods of manufacturing the same. In the semiconductor structure, an in-situ insulating layer is formed on a heterojunction, a groove is provided in the in-situ insulating layer, and a transition layer is provided in the groove and on the in-situ insulating layer. A P-type semiconductor layer is provided on the transition layer in a gate region. The P-type semiconductor layer does not fully fill the groove.
Claims18
A semiconductor structure, comprising:
- a semiconductor substrate (10), a heterojunction (11) and an in-situ insulating layer (12), which are arranged from bottom to top;
- a groove (13), passing through the in-situ insulating layer (12);
- a transition layer (14), disposed in the groove (13) and on the in-situ insulating layer (12);
- and
- a P-type semiconductor layer (15a), disposed on the transition layer (14), wherein the P-type semiconductor layer (15a) does not fully fill the groove (13).
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A method of manufacturing semiconductor structure, comprising:
- providing a semiconductor substrate (10);
- forming a heterojunction (11) on the semiconductor substrate (10);
- forming an in-situ insulating layer (12) on the heterojunction (11);
- forming a groove (13) which passes through the in-situ insulating layer (12);
- and
- forming both a transition layer (14) and a P-type semiconductor layer (15a) in the groove (13) and on the in-situ insulating layer (12), wherein the P-type semiconductor layer (15a) does not fully fill the groove (13).
3 more elements
Dependencies are inferred from the claim text.