Semiconductor device and manufacturing method therefor
AssigneeFujitsu Limited
InventorsShirou OZAKI, Junji KOTANI, Atsushi YAMADA
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Abstract
A semiconductor device includes an AlN substrate, a semiconductor laminated structure, disposed above the substrate, and including an electron transit layer and an electron supply layer made of a nitride semiconductor, respectively, and a gate electrode, a source electrode, and a drain electrode disposed above the electron supply layer. The electron transit layer is located at a lowermost position of the semiconductor laminated structure. The gate electrode has a gate length of 0.3 μm or less, and a ratio of a thickness of the semiconductor laminated structure with respect to the gate length of the gate electrode is 4.0 or less.
Claims19
A semiconductor device comprising:
- an AlN substrate;
- a semiconductor laminated structure, disposed above the substrate, and including an electron transit layer and an electron supply layer made of a nitride semiconductor, respectively;
- and
- a gate electrode, a source electrode, and a drain electrode disposed above the electron supply layer, wherein
- the electron transit layer is located at a lowermost position of the semiconductor laminated structure,
- the gate electrode has a gate length of 0.3 μm or less, and
- a ratio of a thickness of the semiconductor laminated structure with respect to the gate length of the gate electrode is 4.0 or less.
A method for manufacturing a semiconductor device comprising:
- forming a semiconductor laminated structure, including an electron transit layer and an electron supplying layer, above an AlN substrate;
- forming a gate electrode, a source electrode, and a drain electrode above the electron supply layer, wherein
- the electron transit layer is located at a lowermost position of the semiconductor laminated structure,
- the gate electrode has a gate length of 0.3 μm or less, and
- a ratio of a thickness of the semiconductor laminated structure with respect to the gate length of the gate electrode is 4.0 or less.
Dependencies are inferred from the claim text.