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US 2022/0069111 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeRenesas Electronics Corporation
InventorsTomohiro IMAI, Yoshito NAKAZAWA, Katsumi EIKYU
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Abstract
An IGBT capable of handling high-speed switching while reducing a leakage current of a semiconductor device including the IGBT is provided. The semiconductor device according to one embodiment includes an IGBT including a p-type collector layer on a back surface of a silicon substrate and a dislocation suppressing layer for forming a hetero junction with silicon in the p-type collector layer. The dislocation suppressing layer includes a silicon germanium (SiGe) layer.
Claims20
A semiconductor device comprising:
- a silicon substrate including a first main surface and a second main surface facing the first main surface;
- a p-type base layer formed on the first main surface;
- an n-type emitter layer formed in the p-type base layer;
- a p-type collector layer formed on the second main surface;
- and
- a dislocation suppressing layer formed in the p-type collector layer and forming a hetero junction with the silicon substrate.
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A method of manufacturing a semiconductor device comprising:
- a step of preparing a silicon substrate including an n-type emitter layer, a p-type base layer, a trench gate, a trench emitter, a p-type floating layer, an n-type hole barrier layer, a gate electrode and an emitter electrode that are formed in a region of its first main surface;
- a first step of forming a p-type collector layer on a second main surface facing the first main surface of the silicon substrate;
- a second step of forming a first dislocation suppressing layer inside the p-type collector layer, the first dislocation suppressing layer forming a hetero junction with the silicon substrate;
- a third step of forming an n-type field stop layer on the p-type collector layer in the region of the first main surface;
- and
- a fourth step of forming a collector electrode connected to the p-type collector layer.
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Dependencies are inferred from the claim text.