Method for manufacturing semiconductor device
AssigneeChangxin Memory Technologies, Inc.
InventorsWei HUANG, Xiaodong LUO
Life of this patent
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Abstract
A method for manufacturing a semiconductor device, including: acquiring a substrate, wherein a gate structure is formed on the substrate; implanting first ions into the substrate to form pre-amorphized regions at two sides of the gate structure respectively; implanting second ions into the pre-amorphized regions to form amorphized regions in the pre-amorphized regions respectively; forming first sidewalls each at a respective one of the two sides of the gate structure; performing a second doping process to form first doped regions in the amorphized regions; forming second sidewalls each at a side of a respective first sidewall; and forming a heavily-doped source region and a heavily-doped drain region in the first doped regions respectively.
Claims20
A method for manufacturing a semiconductor device, comprising:
- acquiring a substrate, wherein a gate structure is formed on the substrate;
- forming a first mask pattern on the substrate using a mask plate, wherein the first mask pattern exposes a preset source region and a preset drain region located at two sides of the gate structure respectively;
- implanting first ions into the preset source region and the preset drain region by taking the first mask pattern as a first mask, to form pre-amorphized regions;
- implanting second ions into the pre-amorphized regions to form amorphized regions;
- forming first sidewalls each at a respective one of the two sides of the gate structure;
- forming a second mask pattern on the substrate using the mask plate;
- performing a first doping process on the amorphized regions by taking the second mask pattern and the first sidewalls as a second mask, to form first doped regions respectively;
- forming second sidewalls each at a side of a respective first sidewall;
- forming a third mask pattern on the substrate using the mask plate;
- and
- performing a second doping process on the first doped regions by taking the third mask pattern, the first sidewalls and the second sidewalls as a third mask, to form a heavily-doped source region and a heavily-doped drain region respectively.
A semiconductor device manufactured by a method, wherein the method comprises:
- acquiring a substrate, wherein a gate structure is formed on the substrate;
- forming a first mask pattern on the substrate using a mask plate, wherein the first mask pattern exposes a preset source region and a preset drain region located at two sides of the gate structure respectively;
- implanting first ions into the preset source region and the preset drain region by taking the first mask pattern as a first mask, to form pre-amorphized regions;
- implanting second ions into the pre-amorphized regions to form amorphized regions;
- forming first sidewalls each at a respective one of the two sides of the gate structure;
- forming a second mask pattern on the substrate using the mask plate;
- performing a first doping process on the amorphized regions by taking the second mask pattern and the first sidewalls as a second mask, to form first doped regions respectively;
- forming second sidewalls each at a side of a respective first sidewall;
- forming a third mask pattern on the substrate using the mask plate;
- and
- performing a second doping process on the first doped regions by taking the third mask pattern, the first sidewalls and the second sidewalls as a third mask, to form a heavily-doped source region and a heavily-doped drain region respectively.
An electronic apparatus, comprising a semiconductor device manufactured by a method, wherein the method comprises:
- acquiring a substrate, wherein a gate structure is formed on the substrate;
- forming a first mask pattern on the substrate using a mask plate, wherein the first mask pattern exposes a preset source region and a preset drain region located at two sides of the gate structure respectively;
- implanting first ions into the preset source region and the preset drain region by taking the first mask pattern as a first mask, to form pre-amorphized regions;
- implanting second ions into the pre-amorphized regions to form amorphized regions;
- forming first sidewalls each at a respective one of the two sides of the gate structure;
- forming a second mask pattern on the substrate using the mask plate;
- performing a first doping process on the amorphized regions by taking the second mask pattern and the first sidewalls as a second mask, to form first doped regions respectively;
- forming second sidewalls each at a side of a respective first sidewall;
- forming a third mask pattern on the substrate using the mask plate;
- and
- performing a second doping process on the first doped regions by taking the third mask pattern, the first sidewalls and the second sidewalls as a third mask, to form a heavily-doped source region and a heavily-doped drain region respectively.
Dependencies are inferred from the claim text.