Semiconductor device and fabrication method thereof
AssigneeInnoscience (Zhuhai) Technology Co., Ltd.
InventorKING YUEN WONG
Life of this patent
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Abstract
A semiconductor device includes a barrier layer, a dielectric layer, a first spacer, a second spacer, and a gate. The dielectric layer is disposed on the barrier layer and defines a first recess. The first spacer is disposed on the barrier layer and within the first recess. The second spacer is disposed on the barrier layer and within the first recess. The first and second spacers are spaced apart from each other by a top surface of a portion of the barrier layer. The top surface of the portion of the barrier layer is recessed. The gate is disposed on the barrier layer, the dielectric layer, and the first and second spacers, in which the gate has a bottom portion located between the first and second spacers and making contact with the top surface of the portion of the barrier layer.
Claims20
A semiconductor device, comprising:
- a barrier layer;
- a dielectric layer disposed on the barrier layer and defining a first recess;
- a first spacer disposed on the barrier layer and within the first recess;
- a second spacer disposed on the barrier layer and within the first recess, wherein the first and second spacers are spaced apart from each other by a top surface of a portion of the barrier layer, wherein the top surface of the portion of the barrier layer is recessed;
- and
- a gate disposed on the barrier layer, the dielectric layer, and the first and second spacers, wherein the gate has a bottom portion located between the first and second spacers and making contact with the top surface of the portion of the barrier layer.
A semiconductor device, comprising:
- a barrier layer having a top surface and a first recess at the top surface;
- a first spacer disposed on the barrier layer and adjacent to the first recess a second spacer disposed on the barrier layer and adjacent to the first recess, wherein the first recess is located between the first and second spacers;
- a dielectric layer disposed on the barrier layer and away from the first recess such that the first and second spacers are closer to the first recess than the dielectric layer;
- and
- a gate disposed over the barrier layer, the dielectric layer, and the spacer, wherein the gate has a first portion extending from the first recess to the dielectric layer along the first spacer and a second portion extending from the first recess to the dielectric layer along the second spacer, such that the gate has a second recess between the first and second portions and over the first recess.
Dependencies are inferred from the claim text.