Backside contact structures and fabrication for metal on both sides of devices
AssigneeIntel Corporation
InventorsPatrick MORROW, Rishabh MEHANDRU, Aaron D. LILAK, Kimin JUN
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Abstract
An apparatus including a circuit structure including a device stratum including a plurality of devices including a first side and an opposite second side; and a metal interconnect coupled to at least one of the plurality of devices from the second side of the device stratum. A method including forming a transistor device including a channel between a source region and a drain region and a gate electrode on the channel defining a first side of the device; and forming an interconnect to one of the source region and the drain region from a second side of the device.
Claims20
An integrated circuit structure, comprising:
- a semiconductor body having a top, a bottom, a first side and a second side, the first side and the second side between the top and the bottom, and the first side opposite the second side;
- a gate structure over the top and extending along the first side and the second side of the semiconductor body;
- a first source or drain structure in the semiconductor body at a first side of the gate structure;
- a second source or drain structure in the semiconductor body at a second side of the gate structure, the second side opposite the first side;
- and
- a conductive contact on the bottom of the semiconductor body at a location vertically beneath the first source or drain structure.
A computing device, comprising:
- a memory;
- and
- an integrated circuit die coupled to the memory, the integrated circuit die comprising an integrated circuit structure, the integrated circuit structure comprising:
- a semiconductor body having a top, a bottom, a first side and a second side, the first side and the second side between the top and the bottom, and the first side opposite the second side;
- a gate structure over the top and extending along the first side and the second side of the semiconductor body;
- a first source or drain structure in the semiconductor body at a first side of the gate structure;
- a second source or drain structure in the semiconductor body at a second side of the gate structure, the second side opposite the first side;
- and
- a conductive contact on the bottom of the semiconductor body at a location vertically beneath the first source or drain structure.
Dependencies are inferred from the claim text.